FLTD三电极场畸变气体开关寿命特性

针对设计的一种场畸变气体开关,研究中间电极材料分别为不锈钢和黄铜条件下的烧蚀特性,结合开关寿命期间静态与触发特性的变化规律,获得决定开关寿命的关键因素,为三电极场畸变气体开关的性能优化提供理论支撑。研究结果表明,采用不锈钢和黄铜作为中间电极的烧蚀区域以及表面粗糙度均随着放电次数增加而增大,黄铜电极烧蚀较为严重且表面有明显的烧蚀圆斑,不锈钢电极则具有更高的表面粗糙度,阴阳极表面烧蚀存在明显差异,随着放电次数的增加,击穿点向电极边缘区域集中,影响开关的沿面绝缘特性,是导致开关寿命终结的主要原因。     

Description of stability for linear time-invariant systems based on the first curvature

This paper focuses on using the first curvature κ(t) of trajectory to describe the stability of linear time-invariant system. We extend the results for two and three-dimensional systems (Wang, Sun, Song et al, arXiv:1808.00290) to n-dimensional systems. We prove that for a system $\text{◂=▸}\dot{r}(t)=\text{◂⋅▸}Ar(t)$, (a) if there exists a measurable set whose Lebesgue measure is greater than zero, such that $\text{◂≠▸}\underset{t\to +\infty }{\lim }\kappa (t)\ne 0$ or $\underset{t\to +\infty }{\lim }\kappa (t)$ does not exist for any initial value in this set, then the zero solution of the system is stable; (b) if the matrix A is invertible, and there exists a measurable set whose Lebesgue measure is greater than zero, such that $\text{◂=▸}\underset{t\to +\infty }{\lim }\kappa (t)=+\infty$ for any initial value in this set, then the zero solution of the system is asymptotically stable.     

Three-dimensional interfacial fracture analysis of a one-dimensional hexagonal quasicrystal coating

In this paper, the three-dimensional (3D) interfacial fracture is analyzed in a one-dimensional (1D) hexagonal quasicrystal (QC) coating structure under mechanical loading. A planar interface crack with arbitrary shape is studied by a displacement discontinuity method. Fundamental solutions of interfacial concentrated displacement discontinuities are obtained by the Hankel transform technique, and the corresponding boundary integral-differential equations are constructed with the superposition principle. Green’s functions of constant interfacial displacement discontinuities within a rectangular element are derived, and a boundary element method is proposed for numerical simulation. The singularity of stresses near the crack front is investigated, and the stress intensity factors (SIFs) as well as energy release rates (ERRs) are determined. Finally, relevant influencing factors on the fracture behavior are discussed.     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸溅金点的存在对应力分布的影响.在此基础上,在应力集中处预置不同长度的初始裂纹用以描述InSb晶片中的位错,以能量释放率为判据,探究InSb芯片碎裂与迸溅金点和位错线长短的关系.结论如下:1)迸溅金点的存在对InSb芯片碎裂的影响是局部的,在迸溅金点与InSb芯片接触区域的两侧会形成两个应力集中点; 2)环绕预置裂纹的能量释放率会随着预置裂纹长度的增加而加速增大,当预置裂纹长度接近InSb芯片上表面时,能量释放率近乎指数增加,并在预置裂纹贯穿InSb芯片时达到最大值; 3)迸溅金点引起的InSb芯片破碎属于Ⅰ型断裂失效模式,在多周期液氮冲击中,位错线在应力集中效应的驱使下逐步扩展,直至贯穿InSb芯片,最终形成宏观碎裂失效现象.     

Determination of cobalt ion based on polyethyleneimine modified silver nanoclustersEI北大核心CSCD

PolyethyleneiminePEImodified silver nanoclustersAg NCswere synthesized through chemical reduction method by using PEI as stabilizerAgNO3 as silve source and ascorbic acid as reducing agentand it was applied to the detection of cobalt ions. It was found that the fluorescence of the silver nanoclusters was quenched by Co2+ for the aggregation of PEI-Ag NCs caused by the coordination between cobalt ion and amino group on polyethyleneimine. Under the optimized experimental conditionsthe fluorescence quenching degree of PEI-Ag NCs was piecewise linear with the concentration of cobalt ion in the range of 8.30×10-7-4.17×10-4 mol/L and the detection limit was 0.41 μµmol/L. © 2022, Youke Publishing Co.,Ltd. All rights reserved.     

UHMWPE纤维的超临界CO_2辅助渗透预处理研究

利用Minitab软件设计实验,以超高分子量聚乙烯纤维(UHMWPE)为原料,研究了在不同的超临界CO_2流体状态下,处理压力、温度和时间等因素对三羟甲基丙烷三甲基丙烯酸酯(TMPTMA)渗入率的影响,确定了最佳因素设置范围;通过单因子实验优化了超临界CO_2处理工艺,并对经过电子束辐照的UHMWPE纤维凝胶含量和蠕变率进行了测试。研究结果表明:处理温度对TMPTMA的渗入率影响最大,其次为压力,时间的影响最小,确定了最优工艺条件为处理压力25MPa,温度80℃,时间30min;TMPTMA渗入率越高,电子束辐照后UHMWPE纤维的增感辐照交联效应和抗蠕变效果越好。